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BLF244 28V 15W NXP Semiconductors

2016-4-12
           

BLF244


The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
The BLF244 Series Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

 

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency range

The transistor is encapsulated in a 4-lead SOT123 

flange envelope, with a ceramic cap. 

All leads are isolated from the flange.

 

 

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