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EPC EPC2023ENG
PartNo:

EPC2023ENG
Manufacturers: EPC
Qty: 5740
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Description: TRANS GAN 30V 1.3MO BUMPED DIE
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Product Information:
Packaging:Tube
Series:HEXFETR
FET Type:MOSFET P-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta)
Rds On (Max) @ Id, Vgs:12.1 mOhm @ 7.8A, 20V
Vgs(th) (Max) @ Id:2.4V @ 25μA
Gate Charge (Qg) @ Vgs:14nC @ 4.5V
Input Capacitance (Ciss) @ Vds:1270pF @ 25V
Power - Max:2.5W
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
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