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Infineon Technologies BSC16DN25NS3G
PartNo:

BSC16DN25NS3G
Manufacturers: Infineon Technologies
Qty: 3505
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Description: MOSFET N-CH 250V 10.9A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:250 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:10.9 A
Rds On - Drain-Source Resistance:146 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:62.5 W
Mounting Style:SMD/SMT
Package / Case:TDSON-8
Packaging:Reel
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