【BSS806NEH6327XTSA1】PDF/Datasheet/Manufacturers,electronics components distributor

Product Detail

All Product > Discrete Semiconductors > Diodes > Infineon Technologies (BSS806NEH6327XTSA1)

PartNo:	BSS806NEH6327XTSA1
Manufacturers:	Infineon Technologies
Qty:	2998
Request Qty:
Description:	MOSFET MOSFET SMALL SIGNAL N-CH
PDF:

Quick Quotation

Product Information:

RoHS:
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	2.3 A
Rds On - Drain-Source Resistance:	57 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	0.55 V
Qg - Gate Charge:	1.7 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Packaging:	Reel

MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms

MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

MOSFET DUAL P-CH 20V (D-S)

MOSFET 12V 60A 104W 1.2mohm @ 10V

MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv

BSS806NEH6327XTSA1 Related Product