【BSZ018NE2LS】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	1.8 mOhms
Configuration:	Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:	1.2 V to 2 V
Qg - Gate Charge:	29 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69 W
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Packaging:	Reel

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