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All Product >
Discrete Semiconductors
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Diodes
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NXP Semiconductors (BUK7Y59-60EX)
PartNo:
BUK7Y59-60EX
Manufacturers:
NXP Semiconductors
Qty:
3161
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Description:
MOSFET N-channel 60 V 59 mo FET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
38.2 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
7.8 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
37 W
Mounting Style:
SMD/SMT
Package / Case:
LFPAK56-4
Packaging:
Reel
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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