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Discrete Semiconductors
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Cree, Inc. (CMF20120D)
PartNo:
CMF20120D
Manufacturers:
Cree, Inc.
Qty:
1398
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Description:
MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
33 A
Rds On - Drain-Source Resistance:
80 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Qg - Gate Charge:
90.8 nC
Maximum Operating Temperature:
+ 135 C
Pd - Power Dissipation:
150 W
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Packaging:
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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