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Diodes Incorporated DMG4800LK3-13
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DMG4800LK3-13
Manufacturers: Diodes Incorporated
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Description: MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
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Product Information:
RoHS: Details
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage:  
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 12 mOhms
Configuration:  
Vgs th - Gate-Source Threshold Voltage:  
Qg - Gate Charge: 8.7 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.71 W
Mounting Style: SMD/SMT
Package / Case: DPAK-2
Packaging: Reel
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