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ON Semiconductor ECH8660-TL-H
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ECH8660-TL-H
Manufacturers: ON Semiconductor
Qty: 3000
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Description: MOSFET SWITCHING DEVICE
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:4.5 A
Rds On - Drain-Source Resistance:110 mOhms, 82 mOhms
Configuration:Dual Quad Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:4.4 nC, 10 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.3 W
Mounting Style:SMD/SMT
Package / Case:ECH-8
Packaging:Reel
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