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ON Semiconductor ECH8697R-TL-W
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ECH8697R-TL-W
Manufacturers: ON Semiconductor
Qty: 1625
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Description: MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:24 V
Vgs - Gate-Source Breakdown Voltage:12.5 V
Id - Continuous Drain Current:10 A
Rds On - Drain-Source Resistance:11.6 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:6 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.6 W
Mounting Style:SMD/SMT
Package / Case:SOT-28-8
Packaging:Reel
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