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Discrete Semiconductors
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Diodes
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ROHM Semiconductor (EM6M1T2R)
PartNo:
EM6M1T2R
Manufacturers:
ROHM Semiconductor
Qty:
955
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Description:
MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A
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Product Information:
RoHS:
Details
Transistor Polarity:
N and P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V, - 20 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
100 mA, - 200 mA
Rds On - Drain-Source Resistance:
8 Ohms
Configuration:
Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
Pd - Power Dissipation:
150 mW
Mounting Style:
SMD/SMT
Package / Case:
EMT-6
Packaging:
Reel
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SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
EM6M1T2R Related Product
EM6M1
EM6M1 G
EM6M1GT2R
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EM6M2GT2R
EM6M2T2R
EM6M1T2R
EM6M1T2R
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EM6M1GT2R
EM6M1
EM6M1GT2R
EM6M2T2R
EM6M1T2R
EM6M1T2R
EM6M2T2R
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