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GeneSiC Semiconductor GA06JT12-247
PartNo:

GA06JT12-247
Manufacturers: GeneSiC Semiconductor
Qty: 281
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Description: MOSFET SiC Super Junc Trans 1200V-Rds 230mO-6A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:1.2 kV
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:6 A
Rds On - Drain-Source Resistance:220 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:9 W
Mounting Style:Through Hole
Package / Case:TO-247-3
Packaging:Tube
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