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GaN Systems GS61008P-E03-TY
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GS61008P-E03-TY
Manufacturers: GaN Systems
Qty: 471
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Description: MOSFET 100V, 90A, E-Mode Preproduction Units
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:10 V
Id - Continuous Drain Current:90 A
Rds On - Drain-Source Resistance:7.4 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:1.6 V
Qg - Gate Charge:16 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
Mounting Style:SMD/SMT
Package / Case:
Packaging:Tray
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