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Infineon Technologies IPD30N03S4L-09
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IPD30N03S4L-09
Manufacturers: Infineon Technologies
Qty: 2455
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Description: MOSFET N-Channel enh MOSFET 30V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:16 V
Id - Continuous Drain Current:30 A
Rds On - Drain-Source Resistance:9 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:42 W
Mounting Style:SMD/SMT
Package / Case:TO-252-3
Packaging:Reel
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