【IPD50R950CE】PDF/Datasheet/Manufacturers,electronics components distributor

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PartNo:	IPD50R950CE
Manufacturers:	Infineon Technologies
Qty:	1514
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Description:	MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.3 A
Rds On - Drain-Source Resistance:	950 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:	10.5 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	34 W
Mounting Style:	Through Hole
Package / Case:	DPAK-2
Packaging:	Reel

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