【IRFL4105PBF】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.7 A
Rds On - Drain-Source Resistance:	45 mOhms
Configuration:	Single Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:	23 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.1 W
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-3
Packaging:	Tube

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