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Discrete Semiconductors
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IXYS (IXGX320N60B3)
PartNo:
IXGX320N60B3
Manufacturers:
IXYS
Qty:
247
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Description:
IGBT Modules GenX3 600V IGBTs
PDF:
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Product Information:
RoHS:
Product:
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
600 V
Continuous Collector Current at 25 C:
500 A
Gate-Emitter Leakage Current:
400 nA
Power Dissipation:
1.7 kW
Maximum Operating Temperature:
+ 150 C
Package / Case:
PLUS247-3
Packaging:
Tube
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MOSFET 12V 60A 104W 1.2mohm @ 10V
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MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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