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IXYS IXTA10P50P
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IXTA10P50P
Manufacturers: IXYS
Qty: 396
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Description: MOSFET -10.0 Amps -500V 1.000 Rds
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 500 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:10 A
Rds On - Drain-Source Resistance:1 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:300 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Tube
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