Home
Tel: 86-755-83295289 Email:
Product Detail
 All Product > Discrete Semiconductors > Diodes > IXYS  (IXXN110N65C4H1)
IXYS IXXN110N65C4H1
PartNo:

IXXN110N65C4H1
Manufacturers: IXYS
Qty: 778
Request Qty:   
Description: IGBT Modules 650V/234A Trench IGBT GenX4 XPT
PDF:
Quick Quotation
Company Name:* Contact Name:*  
Email:* Tel:*
Request Qty:* Verification Code:*

Product Information:
RoHS:Details
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter
Collector- Emitter Voltage VCEO Max:650 V
Collector-Emitter Saturation Voltage:1.98 V
Continuous Collector Current at 25 C:210 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:750 W
Maximum Operating Temperature:+ 175 C
Package / Case:SOT-227B-4
Packaging:Tube
AUIRF7342QTR
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
IXXN110N65C4H1 Related Product
  • Electronic Components Distributor
    Since 2000
  • ©2001 - 2015  www.cxda.com all rights reservied.
  • Electronic Components Supplier  | 
  • China Electronic Components Manufacturer  | 
  • Electronic Components Distributor