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NXP Semiconductors PSMN013-100YSEX
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PSMN013-100YSEX
Manufacturers: NXP Semiconductors
Qty: 1944
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Description: MOSFET N-channel 100 V 13 mo FET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:58 A
Rds On - Drain-Source Resistance:11 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:75 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:238 W
Mounting Style:SMD/SMT
Package / Case:LFPAK-4
Packaging:Reel
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