【RSQ030P03TR】PDF/Datasheet/Manufacturers,electronics components distributor

Product Detail

All Product > Discrete Semiconductors > Diodes > ROHM Semiconductor (RSQ030P03TR)

Quick Quotation

Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 30 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	100 mOhms
Configuration:	Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Mounting Style:	SMD/SMT
Package / Case:	TSMT-6
Packaging:	Reel

MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms

MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

MOSFET DUAL P-CH 20V (D-S)

MOSFET 12V 60A 104W 1.2mohm @ 10V

MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv