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Vishay / Siliconix SI2315BDS-T1-GE3
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SI2315BDS-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 760
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Description: MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 12 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:3 A
Rds On - Drain-Source Resistance:100 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:750 mW
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Packaging:Reel
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