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Discrete Semiconductors
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Vishay / Siliconix (SI4630DY-T1-GE3)
PartNo:
SI4630DY-T1-GE3
Manufacturers:
Vishay / Siliconix
Qty:
1850
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Description:
MOSFET 25V 36A 7.8W 2.7mohm @ 10V
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Vgs - Gate-Source Breakdown Voltage:
16 V
Id - Continuous Drain Current:
27 A
Rds On - Drain-Source Resistance:
2.7 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.5 W
Mounting Style:
SMD/SMT
Package / Case:
SOIC-8 Narrow
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