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Vishay / Siliconix SI5935CDC-T1-E3
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SI5935CDC-T1-E3
Manufacturers: Vishay / Siliconix
Qty: 1425
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Description: MOSFET 20V 4.0A 3.1W 100mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:3.1 A
Rds On - Drain-Source Resistance:100 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.3 W
Mounting Style:SMD/SMT
Package / Case:1206-8 ChipFET
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