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Vishay / Siliconix SI7190DP-T1-GE3
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SI7190DP-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 1425
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Description: MOSFET 250V 18.4A 96W 118mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:250 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:4.4 A
Rds On - Drain-Source Resistance:118 mOhms
Configuration:Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:5.4 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SO-8
Packaging:Reel
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