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Vishay / Siliconix SI7788DP-T1-GE3
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SI7788DP-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2230
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Description: MOSFET 30V 50A 69W 3.1mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:29.5 A
Rds On - Drain-Source Resistance:3.1 mOhms
Configuration:Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:5.2 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SO-8
Packaging:Reel
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