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Vishay / Siliconix SI8461DB-T2-E1
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SI8461DB-T2-E1
Manufacturers: Vishay / Siliconix
Qty: 1268
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Description: MOSFET 20V 3.7A 1.8W 100mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:- 3.7 A
Rds On - Drain-Source Resistance:136 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:9.5 nC
Maximum Operating Temperature:+ 85 C
Pd - Power Dissipation:1.8 W
Mounting Style:SMD/SMT
Package / Case:Micro Foot-4 1x1
Packaging:Reel
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