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Vishay Semiconductors SIA427ADJ-T1-GE3
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SIA427ADJ-T1-GE3
Manufacturers: Vishay Semiconductors
Qty: 843
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Description: MOSFET 8V 12A 19W
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 8 V
Vgs - Gate-Source Breakdown Voltage:5 V
Id - Continuous Drain Current:- 12 A
Rds On - Drain-Source Resistance:16 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:- 800 mV
Qg - Gate Charge:33 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:19 W
Mounting Style:SMD/SMT
Package / Case:SC-70-6
Packaging:Reel
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