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Vishay / Siliconix SIA456DJ-T1-GE3
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SIA456DJ-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 4849
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Description: MOSFET 200V 2.6A 19W 1.38ohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:200 V
Vgs - Gate-Source Breakdown Voltage:16 V
Id - Continuous Drain Current:1.1 A
Rds On - Drain-Source Resistance:1.38 Ohms
Configuration:Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:1.4 V
Qg - Gate Charge:9.5 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:3.5 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SC-70-6
Packaging:Reel
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