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Vishay / Siliconix SIA527DJ-T1-GE3
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SIA527DJ-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2794
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Description: MOSFET 12V 29mOhm@4.5V 4.5A N-CH
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:12 V
Vgs - Gate-Source Breakdown Voltage:+ /- 8 V
Id - Continuous Drain Current:4.5 A
Rds On - Drain-Source Resistance:41 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:1 V, - 1 V
Qg - Gate Charge:5.6 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:7.8 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SC-70-6 Dual
Packaging:Reel
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