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Vishay / Siliconix SIS456DN-T1-GE3
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SIS456DN-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 1948
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Description: MOSFET 30V 35A N-CH MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:35 A
Rds On - Drain-Source Resistance:4.2 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:36 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:52 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK 1212-8
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