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Discrete Semiconductors
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ROHM Semiconductor (SP8M51TB1)
PartNo:
SP8M51TB1
Manufacturers:
ROHM Semiconductor
Qty:
2178
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Description:
MOSFET Nch+Pch 100V/-100V 3A/-2.5A; MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N and P-Channel
Vds - Drain-Source Breakdown Voltage:
100 V, - 100 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
3 A, - 2.5 A
Rds On - Drain-Source Resistance:
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Mounting Style:
SMD/SMT
Package / Case:
SOP-8
Packaging:
Reel
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SI1913DH-T1-E3
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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