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Infineon Technologies SPI11N60S5
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SPI11N60S5
Manufacturers: Infineon Technologies
Qty: 305
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Description: MOSFET COOL MOS N-CH 600V 11A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:11 A
Rds On - Drain-Source Resistance:380 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:125 W
Mounting Style:Through Hole
Package / Case:I2PAK-3
Packaging:Tube
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