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Vishay / Siliconix (SQD23N06-31L-GE3)
PartNo:
SQD23N06-31L-GE3
Manufacturers:
Vishay / Siliconix
Qty:
975
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Description:
MOSFET 60V 23A 100W 31mohm @ 10V
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
31 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
16 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
3 W
Mounting Style:
SMD/SMT
Package / Case:
DPAK-2
Packaging:
Reel
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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