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Vishay / Siliconix SQD50N05-11L-GE3
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SQD50N05-11L-GE3
Manufacturers: Vishay / Siliconix
Qty: 2000
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Description: MOSFET 50V 50A 75W
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:50 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:50 A
Rds On - Drain-Source Resistance:9 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.5 V
Qg - Gate Charge:34.6 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:75 W
Mounting Style:Through Hole
Package / Case:DPAK-2
Packaging:Reel
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