【STB11N52K3】PDF/Datasheet/Manufacturers,electronics components distributor

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PartNo:	STB11N52K3
Manufacturers:	STMicroelectronics
Qty:	1000
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Description:	MOSFET N-channel 525 V 0.41 Ohm 10 A SuperMESH3
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	525 V
Vgs - Gate-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	510 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:	51 nC
Maximum Operating Temperature:
Pd - Power Dissipation:	125 W
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-2
Packaging:	Reel

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