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Discrete Semiconductors
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STMicroelectronics (STB25N80K5)
PartNo:
STB25N80K5
Manufacturers:
STMicroelectronics
Qty:
127
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Description:
MOSFET N-Ch 800V 0.19 Ohm 19.5A SuperMESH 5
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
19.5 A
Rds On - Drain-Source Resistance:
260 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
40 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Mounting Style:
SMD/SMT
Package / Case:
D2PAK-2
Packaging:
Reel
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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