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Discrete Semiconductors
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Diodes
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STMicroelectronics (STD11N65M2)
PartNo:
STD11N65M2
Manufacturers:
STMicroelectronics
Qty:
980
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Description:
MOSFET POWER MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
670 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
12.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
85 W
Mounting Style:
SMD/SMT
Package / Case:
DPAK-3
Packaging:
Reel
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
STD11N65M2 Related Product
STD1109T-470M-B-C
STD13007
STD1766-Y
STD123UF
STD1862Y
STD13005I
STD13003
STD12NF06L-1
STD17N05T4
STD1703LT4MOSFETIGBTIC
STD11NM60N
STD12NF06
STD12N06
STD1LNC60
STD1NB50-1
STD1NB52
STD10NF06
STD12NE06L
STD17NF03T4
STD100NH03L
STD12N10L-TR
STD11NM50NMOSFETIGBTIC
STD1NK80Z
STD17NF03LT4SH1
STD10NF30
STD1805T4
STD10PF06L
STD17N05L
STD17NE03LT4
STD1LNK60Z
STD1048T4
STD1HNC60T4
STD100NH03LT4MOSFETIGBTIC
STD100N10F7MOSFETIGBTIC
STD150N02
STD1NB40
STD100NH02
STD15N06L
STD1NK80
STD11NM60
STD10PF06 D10PF06
STD10PF06 D10PF06
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