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Discrete Semiconductors
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STMicroelectronics (STF24N60M2)
PartNo:
STF24N60M2
Manufacturers:
STMicroelectronics
Qty:
1943
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Description:
MOSFET N-Ch 600V 0.168Ohm 18A MDmesh II Plus
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
190 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
29 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
30 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
Tube
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