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Discrete Semiconductors
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STMicroelectronics (STFW4N150)
PartNo:
STFW4N150
Manufacturers:
STMicroelectronics
Qty:
502
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Description:
MOSFET N-channel 1500 V 4 A PowerMESH
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.5 kV
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
7 Ohms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
Pd - Power Dissipation:
63 W
Mounting Style:
Through Hole
Package / Case:
TO-3PF-3
Packaging:
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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