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STMicroelectronics STI150N10F7
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STI150N10F7
Manufacturers: STMicroelectronics
Qty: 1000
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Description: MOSFET POWER MOSFET
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Product Information:
RoHS:
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:+/- 20 V
Id - Continuous Drain Current:110 A
Rds On - Drain-Source Resistance:4.2 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:4.5 V
Qg - Gate Charge:117 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:250 W
Mounting Style:Through Hole
Package / Case:I2PAK
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