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Discrete Semiconductors
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STMicroelectronics (STL36N55M5)
PartNo:
STL36N55M5
Manufacturers:
STMicroelectronics
Qty:
555
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Description:
MOSFET N-Ch 550V 0.066Ohm 31A MDmesh V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
550 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
22.5 A
Rds On - Drain-Source Resistance:
90 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
62 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
150 W
Mounting Style:
SMD/SMT
Package / Case:
PowerFLAT-4 8x8 HV
Packaging:
Reel
AUIRF7342QTR
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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