【STP6N120K3】PDF/Datasheet/Manufacturers,electronics components distributor

Product Detail

All Product > Discrete Semiconductors > Diodes > STMicroelectronics (STP6N120K3)

PartNo:	STP6N120K3
Manufacturers:	STMicroelectronics
Qty:	787
Request Qty:
Description:	MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3
PDF:

Quick Quotation

Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	2.4 Ohms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:	34 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube

MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms

MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

MOSFET DUAL P-CH 20V (D-S)

MOSFET 12V 60A 104W 1.2mohm @ 10V

MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv