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Vishay / Siliconix Si3483CDV-T1-E3
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Si3483CDV-T1-E3
Manufacturers: Vishay / Siliconix
Qty: 1903
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Description: MOSFET 30V 8.0A 4.2W 34mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:6.1 A
Rds On - Drain-Source Resistance:34 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2 W
Mounting Style:SMD/SMT
Package / Case:TSOP-6
Packaging:Reel
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