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ROHM Semiconductor US6M11TR
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US6M11TR
Manufacturers: ROHM Semiconductor
Qty: 3000
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Description: MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:20 V, - 12 V
Vgs - Gate-Source Breakdown Voltage:10 V
Id - Continuous Drain Current:1.5 A, 1.3 A
Rds On - Drain-Source Resistance:180 mOhms, 260 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:1 V, - 1 V
Qg - Gate Charge:1.8 nC, 2.4 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1 W
Mounting Style:SMD/SMT
Package / Case:TUMT-6
Packaging:Reel
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