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Discrete Semiconductors
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IGBT
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Toshiba (2SJ305TE85LF)
PartNo:
2SJ305TE85LF
Manufacturers:
Toshiba
Qty:
2933
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Description:
MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
- 200 mA
Rds On - Drain-Source Resistance:
2.4 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
- 1.5 V
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
200 mW
Mounting Style:
SMD/SMT
Package / Case:
TO-236MOD-3
Packaging:
Tube
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