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All Product >
Discrete Semiconductors
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IGBT
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ON Semiconductor (2SJ656)
PartNo:
2SJ656
Manufacturers:
ON Semiconductor
Qty:
200
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Description:
MOSFET POWER MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 100 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
- 18 A
Rds On - Drain-Source Resistance:
58 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
Bulk
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