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All Product >
Discrete Semiconductors
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IGBT
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ON Semiconductor (3LN01S-TL-E)
PartNo:
3LN01S-TL-E
Manufacturers:
ON Semiconductor
Qty:
11460
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Description:
MOSFET 2.5V DRIVE SERIES
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
10 V
Id - Continuous Drain Current:
150 mA
Rds On - Drain-Source Resistance:
6.4 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
1.58 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
150 mW
Mounting Style:
SMD/SMT
Package / Case:
SMCP-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
3LN01S-TL-E Related Product
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3LN01S-K-TL-E
3LN03M-TL--E
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3LN01M-TL-H
3LN01SS-TL-E
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3LN01S-TL
3LN02M-TL
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3LN03SS-TL
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3LN01S-TL-E
3LN01CPA-TB
3LN01M-TL-E
3LN02C
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3LN01ML-AL3-R
3LN01MG-AL3-R
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3LN01CPA-TB-E
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3LN03SS-TL-E
3LN01SS-TL-E
3LN01M
3LN01C-TB-H
3LN01CPA-TB-E
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