【BSP149H6327XTSA1】PDF/Datasheet/Manufacturers,electronics components distributor

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PartNo:	BSP149H6327XTSA1
Manufacturers:	Infineon Technologies
Qty:	92
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Description:	MOSFET SIPMOS Sm-Signal 200V 1.8Ohms 660mA
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	660 mA
Rds On - Drain-Source Resistance:	1 Ohms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	- 1.4 V
Qg - Gate Charge:	11 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 W
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-3
Packaging:	Reel

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