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Infineon Technologies BSP299H6327XUSA1
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BSP299H6327XUSA1
Manufacturers: Infineon Technologies
Qty: 176
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Description: MOSFET SIPMOS Sm-Signal 500V 4mOhm 400mA
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:500 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:400 mA
Rds On - Drain-Source Resistance:3.1 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.8 W
Mounting Style:SMD/SMT
Package / Case:SOT-223-3
Packaging:Reel
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